The International Conference “Micro- and Nanoelectronics – 2012” (ICMNE-2012) with the extended Session "Quantum Informatics" (QI-2012) and the Seminar "Silicon-on-Insulator" (SOI-2012) will be held during October 1-5, 2012 at the “Lipki” resort in Zvenigorod, Moscow Region, Russia.
It continues the series of the International Conferences "ICMNE-2003","QI-2004","ICMNE-2005", "QI-2005","ICMNE-2007", "QI-2007","ICMNE-2009", and "QI-2009".
Chair: E. Velikhov, Russian Scientific Center “Kurchatov Institute”, Moscow, Russia Co-chair: A. Orlikovsky, Institute of Physics and Technology (IPT), Russian Academy of Sciences (RAS), Moscow, Russia Members:
A. Aseev, Institute of Semiconductor Physics, SB of the RAS, Novosibirsk, Russia
D. Averin, Stony Brook University, New York, USA
M. Baklanov, International Microelectronic Center (IMEC), Leuven, Belgium.
V. Benine, ASML, Veldhoven, Netherlands
R. Chabicovsky, Technical University, Vienna, Austria
Yu. Gulyaev, Institute of Radioelectronics, RAS, Moscow, Russia
H.-L. Hwang, National Tsing Hua University, Hsinchu, Taiwan
F. Kuznetsov, Institute of Inorganic Chemistry, SB of the RAS, Novosibirsk, Russia
V. Labunov, Belorussian State University of Informatics and Radioelectronics (BSUIRE), Minsk, Belorussia
K. Likharev, Stony Brook University, New York, USA
V. Litovchenko, Institute of Semiconductor Physics (ISP) of National Ukrainian Academy of Sciences (NUAS), Kiev, Ukraine
J. Nishizawa, Semiconductor Research Institute, Sendai, Japan
K. Novoselov, University of Manchester, Manchester, UK
Yu. Pozhela, Institute of Semiconductor Physics, Vilnyus, Lithuania
I. Rangelow, University of Ilmenau, Ilmenau, Germany
H. Ryssel, Fraunhofer Institute of Integrated Systems and Devices Technology, Erlangen, Germany
Th. Skotnicki, ST Microelectronics, Crolles, France
R. Suris, Ioffe Physical Technical Institute, RAS, S.-Peterburg, Russia
D. Toma. Tokyo Electron Corporation, U.S. Technology Development Center, Albany, USA
A. Toriumi, University of Tokyo, Tokyo, Japan
A. Vasiliev, FSUE “Pulsar”, Moscow, Russia
Program Committee
Chair: A. Orlikovsky, Institute of Physics and Technology (IPT), Russian Academy of Sciences(RAS), Moscow, Russia Co-chair: I. Neizvestnyi, Institute of Semiconductor Physics, SB of the RAS, Novosibirsk, Russia Co-chair: V. Lukichev, Institute of Physics and Technology, RAS, Moscow, Russia Members:
A. Alexandrov, Lomonosov Moscow State University, Moscow, Russia
V. Aristov, Institute of Microelectronics Technology and High-Pure Materials, RAS, Chernogolovka, Russia
V. Betelin, Scientific Institute of System Research, RAS, Moscow, Russia
Yu. Bogdanov, Institute of Physics and Technology, RAS, Moscow, Russia
Yu. Chaplygin, Moscow Institute of Electronic Technology (TU), Zelenograd, Russia
B. Gribov, State Scientific Institute of Ultra-Pure Materials, Zelenograd, Russia
F. Komarov, Belorussian State University, Minsk, Belorussia
Yu. Kopaev, P.N. Lebedev Physical Institute, RAS, Moscow, Russia
P. Kop’ev, Ioffe Physical Technical Institute, RAS, S.-Peterburg, Russia
G. Krasnikov, JSC Mikron, Zelenograd, Russia
P. Maltsev, UHF Semiconductor Microelectronics Institute, RAS, Moscow, Russia
A. Nazarov, Institute of Semiconductor Physics (ISP) of National Ukrainian Academy of Sciences (NUAS), Kiev, Ukraine
Yu. Ozhigov, Lomonosov Moscow State University, Moscow, Russia
V. Panchenko, Institute of Laser and Informatics Technologies Problems, RAS, Shatura, Russia
A. Rudy, Yaroslavl Demidov State University, Yaroslavl, Russia
N. Salaschenko, Institute of Microstructures Physics, RAS, Nizhnii Novgorod, Russia
K. Salikhov, Zavoiskiy Physical-Technical Institute, RAS, Kasan, Russia
A. Sigov, Moscow State Institute of Radioengineering, Electronics and Automation (TU), Moscow, Russia
P. Todua, Moscow Institute of Physics and Technology (TU), Moscow, Russia
A. Vasiliev, FSUE “Pulsar”, Moscow, Russia
V. V’yurkov, Institute of Physics and Technology, RAS, Moscow, Russia
Organizing Committee
Chair: V. Lukichev, Institute of Physics and Technology, RAS, Moscow, Russia Co-chair: K. Rudenko, Institute of Physics and Technology, RAS, Moscow, Russia Members:
I. Abramov, Belorussian State University of Informatics and Radioelectronics (BSUIRE), Minsk, Belorussia
I. Amirov, Yaroslavl Branch of the IPT RAS, Yaroslavl
Yu. Bogdanov, Institute of Physics and Technology, RAS, Moscow, Russia
A. Buharaev, Zavoiskiy Physical-Technical Institute, RAS, Kasan, Russia
M. Chuev, Institute of Physics and Technology, RAS, Moscow, Russia
A. Gorbazevitch, P.N. Lebedev Physical Institute, RAS, Moscow, Russia
M. Korolev, Moscow Institute of Electronic Technology (TU), Zelenograd, Russia
S. Nikitov, Institute of Radioelectronics, RAS, Moscow, Russia
O. Pchelyakov, Institute of Semiconductor Physics, SB of the RAS, Novosibirsk, Russia
V. Rubaev, President of NIX Company, Moscow, Russia
Local Organizing Committee
CM of the RAS, Prof. Vladimir Lukichev – Chair of the ICMNE-2012 Organizing Committee
Prof. Yury Bogdanov - Chair of the QI-2012 Session
Dr. Vladimir V’yurkov - Chair of the SOI-2012 Seminar
Dr. Vladimir Kudrya - Scientific Secretary of ICMNE-2012
Mr. Sergey Skalkin – Financial Administrator of ICMNE-2012
Dr. Andrey Myakon’kih
Dr. Alexander Rogozhin
Dr. Igor Semenikhin
Dr. Alexander Tsukanov
Dipl. Eng. Irina Lukianova
Dipl. Eng. Valeriya Sosina
Institute of Physics & Technology (IPT)
Russian Academy of Sciences
Nakhimovsky av., 34, 117218 Moscow, Russia
